Quantitative structural determination of metallic film growth on a semiconductor crystal: ( sqrt 3-bar x sqrt 3-bar)R 30 degrees -->(1 x 1) Pb on Ge (111)
Phys Rev Lett
.
1989 Jan 30;62(5):559-562.
doi: 10.1103/PhysRevLett.62.559.
Authors
H Huang
,
CM Wei
,
H Li
,
BP Tonner
,
SY Tong
PMID:
10040266
DOI:
10.1103/PhysRevLett.62.559
No abstract available