While the array of analytical methods routinely applied for depth profile analysis was fairly static over the decades of the 1980s and 1990s, there appears to be an emerging technique that has a number of very positive and complementary attributes, and warrants serious consideration by the thin film community. Radio frequency glow discharge optical emission spectroscopy (rf-GD-OES) is a technique that provides depth-resolved elemental composition information on a wide variety of sample types. In a manner very much like most depth profiling methods, the rf-GD plasma utilizes an ion sputtering step to ablate sample material in a layer-by-layer fashion. Different from the more commonly applied methods, the device operates at elevated pressures [2-10 Torr Ar (266-1,330 Pa)] and has the inherent capability of sputtering electrically insulating materials directly, without any auxiliary means of charge compensation. In addition, sputtering rates on the order of 1 micro m/min provide rapid analysis, with depth resolving powers that are comparable to high-vacuum sputtering methods. Three examples of the use of the rf-GD-OES method are presented as examples of its analytical potential: (1) boron-implanted silicon wafer, (2) a barrier-type alumina film, and (3) a porous-type alumina film. It is believed that the method holds a great deal of promise as part of the arsenal of weapons in the thin films laboratory.