Optically driven spin memory in n-doped InAs-GaAs quantum dots

Phys Rev Lett. 2002 Nov 11;89(20):207401. doi: 10.1103/PhysRevLett.89.207401. Epub 2002 Oct 28.

Abstract

We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.