Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates

J Am Chem Soc. 2005 Jun 1;127(21):7920-3. doi: 10.1021/ja050807x.

Abstract

Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Aluminum Compounds / chemistry*
  • Biocompatible Materials / chemistry
  • Biosensing Techniques
  • Gallium / chemistry*
  • Microscopy, Electron, Scanning
  • Nanostructures / chemistry*
  • Zinc Oxide / chemistry*

Substances

  • Aluminum Compounds
  • Biocompatible Materials
  • gallium nitride
  • aluminum nitride
  • Gallium
  • Zinc Oxide