Diamond-hexagonal semiconductor nanocones with controllable apex angle

Linyou Cao; Lee Laim; Chaoying Ni; Bahram Nabet; Jonathan E Spanier

doi:10.1021/ja0544814

Diamond-hexagonal semiconductor nanocones with controllable apex angle

J Am Chem Soc. 2005 Oct 12;127(40):13782-3. doi: 10.1021/ja0544814.

Authors

Linyou Cao¹, Lee Laim, Chaoying Ni, Bahram Nabet, Jonathan E Spanier

Affiliation

¹ Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.

PMID: 16201786
DOI: 10.1021/ja0544814

Abstract

We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Gold / chemistry
Nanostructures / chemistry*
Particle Size
Semiconductors
Silicon / chemistry*

Substances

Gold
Silicon