Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material

Jian Lin; Min Zheng; Jiangshan Chen; Xiang Gao; Dongge Ma

doi:10.1021/ic061851w

Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material

Inorg Chem. 2007 Jan 8;46(1):341-4. doi: 10.1021/ic061851w.

Authors

Jian Lin¹, Min Zheng, Jiangshan Chen, Xiang Gao, Dongge Ma

Affiliation

¹ State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun 130022, People's Republic of China.

PMID: 17198444
DOI: 10.1021/ic061851w

Abstract

Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 106, and the retention time reached 10,000 s without current degradation.