High-performance logic circuits constructed on single CdS nanowires

Nano Lett. 2007 Nov;7(11):3300-4. doi: 10.1021/nl0715286. Epub 2007 Oct 13.

Abstract

A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal-semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has a voltage gain as high as 83, which is the highest reported so far for inverters made on one-dimensional nanomaterials. The MESFETs used in the inverter circuit show excellent transistor performance, such as high on/off current ratio ( approximately 10(7)), low threshold voltage ( approximately -0.4 V), and low subthreshold swing ( approximately 60 mV/dec). With the assembly of three identical NW MESFETs, NOR and NAND gates have been constructed.

Publication types

  • Research Support, Non-U.S. Gov't