Organic field-effect transistors of poly(2,5-bis(3-dodecylthiophen-2-yl)thieno[2,3-b]thiophene) deposited on five different silane self-assembled monolayers

Ruth Rawcliffe; Maxim Shkunov; Martin Heeney; Steven Tierney; Iain McCulloch; Alasdair Campbell

doi:10.1039/b715536k

Organic field-effect transistors of poly(2,5-bis(3-dodecylthiophen-2-yl)thieno[2,3-b]thiophene) deposited on five different silane self-assembled monolayers

Chem Commun (Camb). 2008 Feb 21:(7):871-3. doi: 10.1039/b715536k. Epub 2007 Dec 21.

Authors

Ruth Rawcliffe¹, Maxim Shkunov, Martin Heeney, Steven Tierney, Iain McCulloch, Alasdair Campbell

Affiliation

¹ Department of Physics, The Blackett Laboratory, Imperial College London, South Kensington Campus, London, UK.

PMID: 18253532
DOI: 10.1039/b715536k

Abstract

Depositing a fused-ring thieno-thiophene polymer on different self-assembled monolayers indicates that varying the SAM surface energy changes the FET mobility and turn-on voltage by varying polymer crystallinity at the buried interface.