Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs

Liangti Qu; Feng Du; Liming Dai

doi:10.1021/nl800967n

Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs

Nano Lett. 2008 Sep;8(9):2682-7. doi: 10.1021/nl800967n. Epub 2008 Jul 30.

Authors

Liangti Qu¹, Feng Du, Liming Dai

Affiliation

¹ Department of Chemical and Materials Engineering, School of Engineering, University of Dayton, 300 College Park, Dayton, Ohio 45469, USA.

PMID: 18665651
DOI: 10.1021/nl800967n

Abstract

We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.