We report de Haas-van Alphen effect measurements on CeRu2(Si(1-x)Gex)2 to reveal electronic structure change over the broad range of chemical pressure from x=0.0 to 1.0. It is found that the Fermi surface properties change drastically across the metamagnetic crossover field (B(m)) but vary smoothly with x from those in magnetic fields above B(m) in CeRu2Si2 to those in the ferromagnetic state in CeRu2Ge2. Implications of the present results are discussed in conjunction with the magnetic phase diagram.