The MoO(2) nanorods (NRs) were synthesized by simple hydrogen reduction using the MoO(3) nanobelts (NBs) as the templates. The growth mechanism of one-dimensional (1D) MoO(2) nanostructure can be explained by the cleavage process due to the defects in the MoO(3) NBs. Different I/V characteristics of individual MoO(2) NRs were obtained at different bias voltages, which can be explained by Ohmic and Schottky conduction mechanisms, and the resistivity increased at high bias voltage probably because of the oxidation of MoO(2) NRs with large specific surface area.