We report the growth of isolated single walled carbon nanotubes (SWCNTs) on a silicon surface by chemical vapor deposition, in the temperature range from 800 to 950 degrees C using two different iron catalyst precursors, Fe(NO3)3 x 9H2O and Fe(CO)5. The results show that while for the first catalyst precursor temperature is the key factor in determining nanotube length, for the second it is the density of catalyst precursor on the surface. Solutions of Fe(CO)5 adsorbed on silicon oxide result in a suitable catalyst precursor to obtain SWCNTs of controllable diameter and with clean surfaces.