Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature

Hai Li; Zongyou Yin; Qiyuan He; Hong Li; Xiao Huang; Gang Lu; Derrick Wen Hui Fam; Alfred Iing Yoong Tok; Qing Zhang; Hua Zhang

doi:10.1002/smll.201101016

Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature

Small. 2012 Jan 9;8(1):63-7. doi: 10.1002/smll.201101016. Epub 2011 Oct 20.

Authors

Hai Li¹, Zongyou Yin, Qiyuan He, Hong Li, Xiao Huang, Gang Lu, Derrick Wen Hui Fam, Alfred Iing Yoong Tok, Qing Zhang, Hua Zhang

Affiliation

¹ School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

PMID: 22012880
DOI: 10.1002/smll.201101016

Abstract

Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Equipment Design
Gases / analysis
Gases / chemistry
Nanostructures / chemistry*
Nanotechnology / methods*
Nitrous Oxide / analysis*
Nitrous Oxide / chemistry
Temperature
Transistors, Electronic*

Substances

Gases
Nitrous Oxide