Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

Luyang Wang; Jie Lian; Peng Cui; Yang Xu; Sohyeon Seo; Junghyun Lee; Yinthai Chan; Hyoyoung Lee

doi:10.1039/c2cc17543f

Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

Chem Commun (Camb). 2012 Apr 28;48(34):4052-4. doi: 10.1039/c2cc17543f. Epub 2012 Jan 25.

Authors

Luyang Wang¹, Jie Lian, Peng Cui, Yang Xu, Sohyeon Seo, Junghyun Lee, Yinthai Chan, Hyoyoung Lee

Affiliation

¹ National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.

PMID: 22278380
DOI: 10.1039/c2cc17543f

Abstract

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.