Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO mask

Adv Mater. 2012 Mar 22;24(12):1610-5. doi: 10.1002/adma.201104697. Epub 2012 Feb 22.

Abstract

Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Electricity*
  • Lasers
  • Lead / chemistry
  • Magnesium Oxide / chemistry*
  • Oxides / chemistry*
  • Ruthenium Compounds / chemistry*
  • Titanium / chemistry
  • X-Ray Diffraction
  • Zirconium / chemistry

Substances

  • Oxides
  • Ruthenium Compounds
  • Lead
  • Magnesium Oxide
  • Zirconium
  • Titanium