We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.