Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride

J Am Chem Soc. 2013 May 8;135(18):6758-61. doi: 10.1021/ja400637n. Epub 2013 Apr 30.

Abstract

Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Boron Compounds / chemistry*
  • Particle Size
  • Surface Properties

Substances

  • Boron Compounds
  • boron nitride