Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

Scott A Chambers; Meng Gu; Peter V Sushko; Hao Yang; Chongmin Wang; Nigel D Browning

doi:10.1002/adma.201301030

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

Adv Mater. 2013 Aug 7;25(29):4001-5. doi: 10.1002/adma.201301030. Epub 2013 May 6.

Authors

Scott A Chambers¹, Meng Gu, Peter V Sushko, Hao Yang, Chongmin Wang, Nigel D Browning

Affiliation

¹ Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA. [email protected]

PMID: 23649872
DOI: 10.1002/adma.201301030

Abstract

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.

Keywords: first-principles modeling; metal/oxide interfaces; ohmic contacts; scanning transmission electron microscopy; x-ray and ultraviolet photoemission.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Electric Impedance
Equipment Design
Equipment Failure Analysis
Materials Testing
Metals / chemistry*
Microelectrodes*
Oxides / chemistry*

Substances

Metals
Oxides