A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure

Liwen Sang; Meiyong Liao; Qifeng Liang; Masaki Takeguchi; Benjamin Dierre; Bo Shen; Takashi Sekiguchi; Yasuo Koide; Masatomo Sumiya

doi:10.1002/adma.201304335

A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure

Adv Mater. 2014 Mar 5;26(9):1414-20. doi: 10.1002/adma.201304335. Epub 2013 Dec 6.

Authors

Liwen Sang¹, Meiyong Liao, Qifeng Liang, Masaki Takeguchi, Benjamin Dierre, Bo Shen, Takashi Sekiguchi, Yasuo Koide, Masatomo Sumiya

Affiliation

¹ International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan; JST-PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo, 102-0076, Japan.

PMID: 24310932
DOI: 10.1002/adma.201304335

Abstract

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.

Keywords: InGaN; intermediate-band; multilevel; solar cell.

Publication types

Research Support, Non-U.S. Gov't