Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys

Qingliang Feng; Yiming Zhu; Jinhua Hong; Mei Zhang; Wenjie Duan; Nannan Mao; Juanxia Wu; Hua Xu; Fengliang Dong; Fang Lin; Chuanhong Jin; Chunming Wang; Jin Zhang; Liming Xie

doi:10.1002/adma.201306095

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys

Adv Mater. 2014 May;26(17):2648-53, 2613. doi: 10.1002/adma.201306095. Epub 2014 Feb 20.

Authors

Qingliang Feng¹, Yiming Zhu, Jinhua Hong, Mei Zhang, Wenjie Duan, Nannan Mao, Juanxia Wu, Hua Xu, Fengliang Dong, Fang Lin, Chuanhong Jin, Chunming Wang, Jin Zhang, Liming Xie

Affiliation

¹ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China; School of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China.

PMID: 24677312
DOI: 10.1002/adma.201306095

Abstract

Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).

Keywords: chemical vapor deposition; electrical properties; molybdenum; semiconductor alloys; tunable bandgaps; two-dimensional materials.

Publication types

Research Support, Non-U.S. Gov't