Spin-pump-induced spin transport in p-type Si at room temperature

Phys Rev Lett. 2013 Mar 22;110(12):127201. doi: 10.1103/PhysRevLett.110.127201. Epub 2013 Mar 18.

Abstract

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.