Spin Hall magnetoresistance induced by a nonequilibrium proximity effect

H Nakayama; M Althammer; Y-T Chen; K Uchida; Y Kajiwara; D Kikuchi; T Ohtani; S Geprägs; M Opel; S Takahashi; R Gross; G E W Bauer; S T B Goennenwein; E Saitoh

doi:10.1103/PhysRevLett.110.206601

Spin Hall magnetoresistance induced by a nonequilibrium proximity effect

Phys Rev Lett. 2013 May 17;110(20):206601. doi: 10.1103/PhysRevLett.110.206601. Epub 2013 May 13.

Authors

H Nakayama¹, M Althammer², Y-T Chen³, K Uchida⁴, Y Kajiwara⁵, D Kikuchi⁶, T Ohtani⁵, S Geprägs⁷, M Opel⁷, S Takahashi⁵, R Gross⁸, G E W Bauer⁹, S T B Goennenwein⁷, E Saitoh¹⁰

Affiliations

¹ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.
² Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany and Center for Materials Information Technology MINT and Department of Chemistry, University of Alabama, Tuscaloosa, Alabama 35487, USA.
³ Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands.
⁴ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan.
⁵ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
⁶ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
⁷ Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.
⁸ Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany and Physik-Department, Technische Universität München, 85748 Garching, Germany.
⁹ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands and WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
¹⁰ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and CREST, Japan Science and Technology Agency, Tokyo 102-0076, Japan and The Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.

PMID: 25167435
DOI: 10.1103/PhysRevLett.110.206601

Abstract

We report anisotropic magnetoresistance in Pt|Y(3)Fe(5)O(12) bilayers. In spite of Y(3)Fe(5)O(12) being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y(3)Fe(5)O(12), excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."