Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride

Small. 2015 Mar 25;11(12):1402-8. doi: 10.1002/smll.201402543. Epub 2014 Nov 3.

Abstract

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.

Keywords: current annealing; electron transport; graphene; heterostructures; hexagonal boron nitride; substrate engineering.

Publication types

  • Research Support, N.I.H., Extramural
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Boron Compounds / chemistry*
  • Crystallization / methods
  • Electric Conductivity
  • Electron Transport
  • Gases / chemistry*
  • Graphite / chemistry*
  • Nanoparticles / chemistry*
  • Nanoparticles / ultrastructure*
  • Oxides / chemistry
  • Particle Size
  • Surface Properties

Substances

  • Boron Compounds
  • Gases
  • Oxides
  • boron nitride
  • Graphite