Semiconductor double quantum dot micromaser

Y-Y Liu; J Stehlik; C Eichler; M J Gullans; J M Taylor; J R Petta

doi:10.1126/science.aaa2501

Semiconductor double quantum dot micromaser

Science. 2015 Jan 16;347(6219):285-7. doi: 10.1126/science.aaa2501.

Authors

Y-Y Liu¹, J Stehlik¹, C Eichler¹, M J Gullans², J M Taylor³, J R Petta⁴

Affiliations

¹ Department of Physics, Princeton University, Princeton, NJ 08544, USA.
² Joint Quantum Institute, University of Maryland-National Institute of Standards and Technology, College Park, MD 20742, USA.
³ Joint Quantum Institute, University of Maryland-National Institute of Standards and Technology, College Park, MD 20742, USA. Joint Center for Quantum Information and Computer Science, University of Maryland and NIST, College Park, MD 20742, USA.
⁴ Department of Physics, Princeton University, Princeton, NJ 08544, USA. Department of Physics, University of California, Santa Barbara, CA 93106, USA. [email protected].

PMID: 25593187
DOI: 10.1126/science.aaa2501

Abstract

The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.