Tunable piezoresistivity of nanographene films for strain sensing

ACS Nano. 2015 Feb 24;9(2):1622-9. doi: 10.1021/nn506341u. Epub 2015 Feb 6.

Abstract

Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of ∼100 KΩ/□, a gauge factor of more than 600 can be achieved, which is 50× larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 10(4) cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.

Keywords: artificial electronic skin; controllable size; graphene; tunneling effect; ultrasensitivity.

Publication types

  • Research Support, Non-U.S. Gov't