Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

Mei Zhang; Yiming Zhu; Xinsheng Wang; Qingliang Feng; Shanlin Qiao; Wen Wen; Yanfeng Chen; Menghua Cui; Jin Zhang; Congzhong Cai; Liming Xie

doi:10.1021/jacs.5b03807

Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

J Am Chem Soc. 2015 Jun 10;137(22):7051-4. doi: 10.1021/jacs.5b03807. Epub 2015 May 28.

Authors

Mei Zhang¹, Yiming Zhu^{1

2}, Xinsheng Wang¹, Qingliang Feng^{1

3}, Shanlin Qiao¹, Wen Wen¹, Yanfeng Chen¹, Menghua Cui¹, Jin Zhang³, Congzhong Cai², Liming Xie¹

Affiliations

¹ †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
² ‡Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China.
³ §Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.

PMID: 25996159
DOI: 10.1021/jacs.5b03807

Abstract

Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1-3 μm. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS2 and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0°. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1-1.1 cm(2) V(-1) s(-1).