NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Ming-Yang Li; Yumeng Shi; Chia-Chin Cheng; Li-Syuan Lu; Yung-Chang Lin; Hao-Lin Tang; Meng-Lin Tsai; Chih-Wei Chu; Kung-Hwa Wei; Jr-Hau He; Wen-Hao Chang; Kazu Suenaga; Lain-Jong Li

doi:10.1126/science.aab4097

NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Science. 2015 Jul 31;349(6247):524-8. doi: 10.1126/science.aab4097. Epub 2015 Jul 30.

Authors

Ming-Yang Li¹, Yumeng Shi², Chia-Chin Cheng³, Li-Syuan Lu⁴, Yung-Chang Lin⁵, Hao-Lin Tang², Meng-Lin Tsai⁶, Chih-Wei Chu⁷, Kung-Hwa Wei⁸, Jr-Hau He⁶, Wen-Hao Chang⁹, Kazu Suenaga⁵, Lain-Jong Li¹⁰

Affiliations

¹ Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia. Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.
² Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
³ Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan. Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
⁴ Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
⁵ National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
⁶ Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
⁷ Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.
⁸ Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
⁹ Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taiwan.
¹⁰ Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia. [email protected].

PMID: 26228146
DOI: 10.1126/science.aab4097

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.