A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

Youngjo Jin; Dong Hoon Keum; Sung-Jin An; Joonggyu Kim; Hyun Seok Lee; Young Hee Lee

doi:10.1002/adma.201502278

A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

Adv Mater. 2015 Oct 7;27(37):5534-40. doi: 10.1002/adma.201502278. Epub 2015 Aug 21.

Authors

Youngjo Jin^{1

2}, Dong Hoon Keum^{1

2}, Sung-Jin An^{1

2}, Joonggyu Kim^{1

2}, Hyun Seok Lee¹, Young Hee Lee^{1

2

3}

Affiliations

¹ Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.
² Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.
³ Department of Physics, Sungkyunkwan University, Suwon, 440-746, South Korea.

PMID: 26293986
DOI: 10.1002/adma.201502278

Abstract

A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

Keywords: elemental doping; p-n diodes; p-type MoSe2; transition metal dichalcogenides; van der Waals homojunction.