Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Jian Zhu; Xiaolong Liu; Michael L Geier; Julian J McMorrow; Deep Jariwala; Megan E Beck; Wei Huang; Tobin J Marks; Mark C Hersam

doi:10.1002/adma.201504501

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics

Adv Mater. 2016 Jan 6;28(1):63-8. doi: 10.1002/adma.201504501. Epub 2015 Oct 30.

Authors

Jian Zhu¹, Xiaolong Liu², Michael L Geier¹, Julian J McMorrow¹, Deep Jariwala¹, Megan E Beck¹, Wei Huang³, Tobin J Marks^{1

2

3}, Mark C Hersam^{1

2

3

4}

Affiliations

¹ Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA.
² Graduate Program in Applied Physics, Northwestern University, Evanston, IL, 60208, USA.
³ Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA.
⁴ Department of Medicine, Northwestern University, Evanston, IL, 60208, USA.

PMID: 26514248
DOI: 10.1002/adma.201504501

Abstract

Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakage currents down to 6 × 10(-9) A cm(-2) that enable low voltage operation of p-type semiconducting single-walled carbon nanotube and n-type indium gallium zinc oxide field-effect transistors.

Keywords: 2D dielectrics; LBL assembly; capacitors; nanosheets; transistors.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Bentonite / chemistry*
Electric Impedance
Models, Molecular
Molecular Conformation
Nanostructures / chemistry
Nanotechnology / methods*
Solutions

Substances

Solutions
Bentonite