Quantifying Geometric Strain at the PbS QD-TiO₂ Anode Interface and Its Effect on Electronic Structures

Nano Lett. 2015 Dec 9;15(12):7829-36. doi: 10.1021/acs.nanolett.5b02373. Epub 2015 Nov 13.

Abstract

Quantum dots (QDs) show promise as the absorber in nanostructured thin film solar cells, but achieving high device efficiencies requires surface treatments to minimize interfacial recombination. In this work, lead sulfide (PbS) QDs are grown on a mesoporous TiO2 film with a crystalline TiO2 surface, versus one coated with an amorphous TiO2 layer by atomic layer deposition (ALD). These mesoporous TiO2 films sensitized with PbS QDs are characterized by X-ray and electron diffraction, as well as X-ray absorption spectroscopy (XAS) in order to link XAS features with structural distortions in the PbS QDs. The XAS features are further analyzed with quantum simulations to probe the geometric and electronic structure of the PbS QD-TiO2 interface. We show that the anatase TiO2 surface structure induces PbS bond angle distortions, which increases the energy gap of the PbS QDs at the interface.

Keywords: X-ray absorption near edge structure; X-ray absorption spectroscopy; atomic layer deposition; density functional theory; quantum dot; sensitized solar cell.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.