Parallel Stitching of 2D Materials

Xi Ling; Yuxuan Lin; Qiong Ma; Ziqiang Wang; Yi Song; Lili Yu; Shengxi Huang; Wenjing Fang; Xu Zhang; Allen L Hsu; Yaqing Bie; Yi-Hsien Lee; Yimei Zhu; Lijun Wu; Ju Li; Pablo Jarillo-Herrero; Mildred Dresselhaus; Tomás Palacios; Jing Kong

doi:10.1002/adma.201505070

Parallel Stitching of 2D Materials

Adv Mater. 2016 Mar 23;28(12):2322-9. doi: 10.1002/adma.201505070. Epub 2016 Jan 27.

Authors

Xi Ling¹, Yuxuan Lin¹, Qiong Ma², Ziqiang Wang³, Yi Song¹, Lili Yu¹, Shengxi Huang¹, Wenjing Fang¹, Xu Zhang¹, Allen L Hsu¹, Yaqing Bie², Yi-Hsien Lee⁴, Yimei Zhu⁵, Lijun Wu⁵, Ju Li^{3

6}, Pablo Jarillo-Herrero², Mildred Dresselhaus^{1

2}, Tomás Palacios¹, Jing Kong¹

Affiliations

¹ Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
² Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
³ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
⁴ Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 20013, Taiwan.
⁵ Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA.
⁶ Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.

PMID: 26813882
DOI: 10.1002/adma.201505070

Abstract

Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly through selective "sowing" of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

Keywords: MoS2; heterostructure; intergrated circuits; synthesis; two-dimensional materials.