Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

James Semple; Stephan Rossbauer; Claire H Burgess; Kui Zhao; Lethy Krishnan Jagadamma; Aram Amassian; Martyn A McLachlan; Thomas D Anthopoulos

doi:10.1002/smll.201503110

Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates

Small. 2016 Apr;12(15):1993-2000. doi: 10.1002/smll.201503110. Epub 2016 Feb 25.

Authors

James Semple¹, Stephan Rossbauer¹, Claire H Burgess², Kui Zhao³, Lethy Krishnan Jagadamma³, Aram Amassian³, Martyn A McLachlan², Thomas D Anthopoulos¹

Affiliations

¹ Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK.
² Department of Materials and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK.
³ Solar and Photovoltaic Engineering Research Centre and Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.

PMID: 26918520
DOI: 10.1002/smll.201503110

Abstract

Coplanar radio frequency Schottky diodes based on solution-processed C60 and ZnO semiconductors are fabricated via adhesion-lithography. The development of a unique asymmetric nanogap electrode architecture results in devices with a high current rectification ratio (10(3) -10(6) ), low operating voltage (<3 V), and cut-off frequencies of >400 MHz. Device fabrication is scalable and can be performed at low temperatures even on plastic substrates with very high yield.

Keywords: Schottky diode; nanodiodes; nanogap electrodes; plastic substrates; radio frequency diodes.

Publication types

Research Support, Non-U.S. Gov't