Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

Adv Mater. 2016 Sep;28(33):7101-5. doi: 10.1002/adma.201600560. Epub 2016 Jun 15.

Abstract

Single-photon emitters in monolayer WSe2 are created at the nanoscale gap between two single-crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.

Keywords: atomically thin semiconductors; nanogaps; single-photon emitters; strain engineering; super-localization microscopy.