Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

Tribhuwan Pandey; Avinash P Nayak; Jin Liu; Samuel T Moran; Joon-Seok Kim; Lain-Jong Li; Jung-Fu Lin; Deji Akinwande; Abhishek K Singh

doi:10.1002/smll.201600808

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

Small. 2016 Aug;12(30):4063-9. doi: 10.1002/smll.201600808. Epub 2016 Jun 20.

Authors

Tribhuwan Pandey¹, Avinash P Nayak², Jin Liu³, Samuel T Moran², Joon-Seok Kim², Lain-Jong Li⁴, Jung-Fu Lin^{3

5}, Deji Akinwande², Abhishek K Singh¹

Affiliations

¹ Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
² Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
³ Department of Geological Sciences, The University of Texas at Austin, Austin, TX, 78712, USA.
⁴ Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia.
⁵ Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China.

PMID: 27323330
DOI: 10.1002/smll.201600808

Abstract

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

Keywords: Raman spectra; doping; graphene; heterostructures; hydrostatic pressure; molybdenum disulfide.