Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics

Adv Mater. 2016 Oct;28(38):8463-8468. doi: 10.1002/adma.201602854. Epub 2016 Aug 3.

Abstract

Strain-gated flexible optoelectronics are reported based on monolayer MoS2 . Utilizing the piezoelectric polarization created at the metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

Keywords: adaptive optoelectronics; monolayer MoS2; piezophototronic effect.