Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

Yann-Wen Lan; Carlos M Torres Jr; Shin-Hung Tsai; Xiaodan Zhu; Yumeng Shi; Ming-Yang Li; Lain-Jong Li; Wen-Kuan Yeh; Kang L Wang

doi:10.1002/smll.201601310

Atomic-Monolayer MoS₂ Band-to-Band Tunneling Field-Effect Transistor

Small. 2016 Nov;12(41):5676-5683. doi: 10.1002/smll.201601310. Epub 2016 Sep 4.

Authors

Yann-Wen Lan^{1

2}, Carlos M Torres Jr³, Shin-Hung Tsai⁴, Xiaodan Zhu⁴, Yumeng Shi⁵, Ming-Yang Li^{5

6}, Lain-Jong Li⁵, Wen-Kuan Yeh^{7

8}, Kang L Wang⁹

Affiliations

¹ National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu, 30078, Taiwan. [email protected].
² Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. [email protected].
³ Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. [email protected].
⁴ Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA.
⁵ Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
⁶ Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan.
⁷ National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu, 30078, Taiwan.
⁸ Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, 811, Taiwan.
⁹ Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. [email protected].

PMID: 27594654
DOI: 10.1002/smll.201601310

Abstract

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS₂ as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS₂ , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

Keywords: 2D materials; MoS2; band-to-band tunneling; transition metal dichalcogenides; tunneling field effect transistors.