Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

Sahar Saremi; Ruijuan Xu; Liv R Dedon; Julia A Mundy; Shang-Lin Hsu; Zuhuang Chen; Anoop R Damodaran; Scott P Chapman; Joseph T Evans; Lane W Martin

doi:10.1002/adma.201603968

Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

Adv Mater. 2016 Dec;28(48):10750-10756. doi: 10.1002/adma.201603968. Epub 2016 Oct 10.

Authors

Sahar Saremi¹, Ruijuan Xu¹, Liv R Dedon¹, Julia A Mundy^{1

2}, Shang-Lin Hsu^{1

2}, Zuhuang Chen^{1

2}, Anoop R Damodaran¹, Scott P Chapman³, Joseph T Evans³, Lane W Martin^{1

2}

Affiliations

¹ Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
² Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
³ Radiant Technologies, Inc, 2835 Pan American Fwy., Ste. B/C, Albuquerque, NM, 87107, USA.

PMID: 27723127
DOI: 10.1002/adma.201603968

Abstract

A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO₃ system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.

Keywords: electrical resistivity; ferroelectric; ion bombardment; lead titanate; thin films.