Scanning photocurrent microscopy is a powerful tool for investigating charge transfer and internal fields, which strongly influence carrier statics and dynamics in semiconductor nanowires. We performed comprehensive numerical modeling of the carrier dynamics of graded-composition and graded-doping AlGaAs nanowires to achieve a greater understanding of these nanowires. The simulation results indicated that the built-in electric field changes the shape of the scanning photocurrent microscopy profiles, which helped us to judge the dopant level, Al composition range and doping type of the material. The simulation results also assess the potential of the scanning photocurrent techniques in graded-doping and graded-composition nanowire properties.