Ultrastrong Boron Frameworks in ZrB12 : A Highway for Electron Conducting

Teng Ma; Hui Li; Xu Zheng; Shanmin Wang; Xiancheng Wang; Huaizhou Zhao; Songbai Han; Jian Liu; Ruifeng Zhang; Pinwen Zhu; Youwen Long; Jinguang Cheng; Yanming Ma; Yusheng Zhao; Changqing Jin; Xiaohui Yu

doi:10.1002/adma.201604003

Ultrastrong Boron Frameworks in ZrB₁₂ : A Highway for Electron Conducting

Adv Mater. 2017 Jan;29(3). doi: 10.1002/adma.201604003. Epub 2016 Nov 15.

Authors

Teng Ma^{1

2}, Hui Li¹, Xu Zheng¹, Shanmin Wang³, Xiancheng Wang¹, Huaizhou Zhao¹, Songbai Han⁴, Jian Liu¹, Ruifeng Zhang^{4

5}, Pinwen Zhu², Youwen Long^{1

6}, Jinguang Cheng¹, Yanming Ma², Yusheng Zhao³, Changqing Jin^{1

6}, Xiaohui Yu¹

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
² State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, China.
³ Department of Physics, South University of Science and Technology of China, Shenzhen, 518055, China.
⁴ Neutron Scattering Laboratory, China Institute of Atomic Energy, Beijing, 102413, China.
⁵ School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
⁶ Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.

PMID: 27862357
DOI: 10.1002/adma.201604003

Abstract

ZrB₁₂ , with a high symmetrical cubic structure, possesses both high hardness ≈27.0 GPa and ultralow electrical resistivity ≈18 µΩ cm at room temperature. Both the superior conductivity and hardness of ZrB₁₂ are associated with the extended BB 3D covalent bonding network as it is not only favorable for achieving high hardness, but also provides conducting channels for transporting electrons.

Keywords: 3D boron frameworks; delocalized π-bonds; metallic electric resistivity.