Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

M R Müller; R Salazar; S Fathipour; H Xu; K Kallis; U Künzelmann; A Seabaugh; J Appenzeller; J Knoch

doi:10.1186/s11671-016-1728-7

Gate-Controlled WSe₂ Transistors Using a Buried Triple-Gate Structure

Nanoscale Res Lett. 2016 Dec;11(1):512. doi: 10.1186/s11671-016-1728-7. Epub 2016 Nov 22.

Authors

M R Müller^{1

2

3}, R Salazar⁴, S Fathipour⁵, H Xu⁵, K Kallis¹, U Künzelmann⁶, A Seabaugh⁵, J Appenzeller⁴, J Knoch⁷

Affiliations

¹ Intelligent Microsystems Chair, TU Dortmund, Emil-Figge-Str. 68, 44227, Dortmund, Germany.
² Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany.
³ Present address: Infineon Technologies, Siemensstrasse 2, 9500, Villach, Austria.
⁴ Birck Nanotechnology Center, Purdue University, 1205 W. State Street, West Lafayette, IN, 47907, USA.
⁵ Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
⁶ Institute of Semiconductor and Microsystems Technology, TU Dresden, 01062, Dresden, Germany.
⁷ Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany. [email protected].

Abstract

In the present paper, we show tungsten diselenide (WSe₂) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe₂ flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.

Keywords: Electrostatic doping; Reconfigurable device; Tungsten diselenide (WSe2).