Chemically Homogeneous and Thermally Robust Ni_1-xPt_xSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

To synthesize a thermally robust Ni_1-xPt_xSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni_1-xPt_xSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni_1-xPt_xSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.