Metal ion mediated electron transfer at dye-semiconductor interfaces

Jamie C Wang; Kyle Violette; Omotola O Ogunsolu; Kenneth Hanson

doi:10.1039/c6cp07939c

Metal ion mediated electron transfer at dye-semiconductor interfaces

Phys Chem Chem Phys. 2017 Jan 25;19(4):2679-2682. doi: 10.1039/c6cp07939c.

Authors

Jamie C Wang¹, Kyle Violette¹, Omotola O Ogunsolu², Kenneth Hanson³

Affiliations

¹ Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32304, USA. [email protected].
² Materials Science and Engineering, Florida State University, Tallahassee, Florida 32306, USA.
³ Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32304, USA. [email protected] and Materials Science and Engineering, Florida State University, Tallahassee, Florida 32306, USA.

PMID: 28083585
DOI: 10.1039/c6cp07939c

Abstract

Here we demonstrate that the incorporation of Cu²⁺ linking ions into self-assembled bilayer films significantly perturbs the electron transfer rate at dye-semiconductor interfaces. Despite near unity quenching of the excited state of the dye by the Cu²⁺ ions, a charge separated state with slowed recombination is observed.