Identifying the Collective Length in VO₂ Metal-Insulator Transitions

The "collective length" in VO₂ metal-insulator transitions is identified by controlling nanoscale dopant distribution in thin films. The crossover from the local transition to the collective transition is observed, which originates from the increased instability of the metal-insulator domain boundary. This instability renders the transition collective within the "collective length", which will enable the design of collective electronic devices.