Application of CMOS Technology to Silicon Photomultiplier Sensors

Nicola D'Ascenzo; Xi Zhang; Qingguo Xie

doi:10.3390/s17102204

Application of CMOS Technology to Silicon Photomultiplier Sensors

Sensors (Basel). 2017 Sep 25;17(10):2204. doi: 10.3390/s17102204.

Authors

Nicola D'Ascenzo¹, Xi Zhang², Qingguo Xie³

Affiliations

¹ School of life science and technology, Huazhong University of Science and Technology, Wuhan 430073, China. [email protected].
² School of life science and technology, Huazhong University of Science and Technology, Wuhan 430073, China. [email protected].
³ School of life science and technology, Huazhong University of Science and Technology, Wuhan 430073, China. [email protected].

Abstract

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.

Keywords: avalanche detection structures; geiger mode; low photon flux sensors; silicon photomultiplier.