We report a new structure of depth controllable amorphous silicon (a-Si) crescent shells array, fabricated by the SiO2 monolayer array assisted deposition of a-Si by plasma enhanced chemical vapor deposition and nanosphere lithography, for high-efficiency light trapping applications. The depth of the crescent shell cavity was tailored by selective etching of a-Si layer of the SiO2/a-Si core/shell nanoparticle array with a varied etching time. The morphological changes of the crescent shells were examined by scanning electron microscopy and atomic force microscopy. A simple model is developed to describe the geometrical evolution of the a-Si crescent shells. Spectroscopic measurements and finite difference time domain simulations were conducted to examine the optical performance of the crescent shells. Results show that these nanostructures all have a broadband high efficiency absorption and that the light trapping capability of these crescent shell structures depends on the excitation of depths-regulated optical resonance modes. With an appropriate selection of process parameters, the structure of crescent a-Si shells may be fine-tuned to achieve an optimal light trapping capacity.