Publisher Correction: Interlayer excitons in a bulk van der Waals semiconductor
Nat Commun
.
2017 Nov 17;8(1):1703.
doi: 10.1038/s41467-017-01621-1.
Authors
Ashish Arora
1
,
Matthias Drüppel
2
,
Robert Schmidt
1
,
Thorsten Deilmann
2
3
,
Robert Schneider
1
,
Maciej R Molas
4
,
Philipp Marauhn
2
,
Steffen Michaelis de Vasconcellos
1
,
Marek Potemski
4
,
Michael Rohlfing
2
,
Rudolf Bratschitsch
5
Affiliations
1
Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, 48149, Münster, Germany.
2
Institute of Solid State Theory, University of Münster, Wilhelm-Klemm-Strasse 10, 48149, Münster, Germany.
3
Center for Atomic-Scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark.
4
Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 rue des Martyrs, 38042, Grenoble, France.
5
Institute of Physics and Center for Nanotechnology, University of Münster, Wilhelm-Klemm-Strasse 10, 48149, Münster, Germany.
[email protected]
.
PMID:
29150599
PMCID:
PMC5693861
DOI:
10.1038/s41467-017-01621-1
Abstract
A correction to this article has been published and is linked from the HTML version of this article.
Publication types
Published Erratum