Single-Mode Microwave Heating-Induced Concurrent Out-of-Plane Twin Growth Suppression and In-Plane Epitaxial Growth Promotion of b-Oriented MFI Film under Mild Reaction Conditions

In this study, single-mode microwave heating was applied in epitaxial growth of b-oriented MFI seed monolayer prepared by facile manual assembly, resulting in the formation of well-intergrown and highly b-oriented MFI film with few twins. It exhibited a precise molecular sieving property at a reaction temperature no higher than 100 °C within 2 hours, therefore making it possible for easy operation in an open environment. The capability for concurrent suppression of undesired out-of-plane twin growth and promotion of in-plane epitaxial growth rate under mild reaction conditions was attributed to the obvious superiority of single-mode microwave heating in comparison with conventional multi-mode microwave heating in aspects of microwave field uniformity and intensity. Our research indicated that the single-mode microwave heating technique could potentially be a useful tool for improving the microstructure and therefore the performance of diverse zeolite films.