Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry

Mattias Kruskopf; Albert F Rigosi; Alireza R Panna; Dinesh K Patel; Hanbyul Jin; Martina Marzano; Michael Berilla; David B Newell; Randolph E Elmquist

doi:10.1109/ted.2019.2926684

Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry

IEEE Trans Electron Devices. 2019;66(9):10.1109/ted.2019.2926684. doi: 10.1109/ted.2019.2926684.

Authors

Mattias Kruskopf¹, Albert F Rigosi², Alireza R Panna², Dinesh K Patel³, Hanbyul Jin¹, Martina Marzano⁴, Michael Berilla², David B Newell², Randolph E Elmquist²

Affiliations

¹ Department of Physics, Joint Quantum Institute, University of Maryland, College Park, MD 20742 USA.
² National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
³ Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan.
⁴ Politecnico di Turin, Istituto Nazionale di Ricerca Metrologica, 10135 Turin, Italy.

Abstract

In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.

Keywords: Epitaxial graphene (EG); multi-series (MS) contacts; quantized Hall resistance (QHR) standards; quantum Hall effect (QHE); superconducting contacts.

Grants and funding

9999-NIST/ImNIST/Intramural NIST DOC/United States