A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an IUV/Idark of ∼100 to ultraviolet light irradiation.
Keywords: ZnO nanowire; photolithography; single nanowire device; ultraviolet photodetector.