Interplay between positive magnetoresistance and thermoelectric properties by tuning carrier concentration in Sb_{2- x}Sn_xTe₃(x⩽ 0.05) crystals

We report transport properties of Sb_2-xSn_xTe₃(x⩽ 0.05) single crystals, where the tuning of the charge carrier densities via Sn doping significantly improves the magnetoresistance (MR) and the thermoelectric (TE) properties. The MR increases significantly at 2 K forx= 0.01, which reduces considerably with further Sn doping atx= 0.05. The MR results below 90 K forx= 0.01 satisfy the semi-classical two-band approach of Kohler's rule, which does not satisfy the MR results forx= 0.05. At 300 K, the Seebeck coefficient (S) is positive and small forx= 0.01 and it changes the sign with the further increase in Sn doping atx= 0.05 at 300 K. The value of |S| is considerable with an enhancement of the thermoelectric power factor compared to the value forx= 0.01 at 300 K. Analysis of the Hall conductivity indicates the interplay between carrier mobilities and densities, leading to the tuning of MR and TE properties with Sn doping. These results demonstrate that the p-type Sb₂Te₃becomes n-type with a suitable doping engineering.